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| AP9435GK Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching SOT-223 G D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S -30V 50m -6A ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 Rating -30 25 -6 -4.8 -20 2.7 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Continuous Drain Current3 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 45 Unit /W Data and specifications subject to change without notice 200708031 AP9435GK Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -30 -1 -0.02 50 100 -3 -1 -25 100 16 912 - V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A 10 9.2 2.8 5.2 11 8 25 17 507 222 158 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-5.3A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 25V ID=-5.3A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=6,VGS=-10V RD=15 VGS=0V VDS=-15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=-2.3A, VGS=0V IS=-5.3A, VGS=0V, dI/dt=100A/s Min. Typ. Max. Units 29 20 -1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 120 /W when mounted on Min. copper pad. AP9435GK 30 30 25 -ID , Drain Current (A) -ID , Drain Current (A) 20 -10V -8.0V T A =25 o C -6.0V -5.0V V G =-4.0V 25 T A =150 o C 20 -10V -8.0V -6.0V -5.0V V G =-4.0V 15 15 10 10 5 5 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 7 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 110 1.8 100 I D =5.3A T A =25 Normalized R DS(ON) 1.6 I D =-5.3A V G =10V 90 1.4 RDS(ON) (m ) 80 70 1.2 60 1.0 50 0.8 40 30 3 4 5 6 7 8 9 10 11 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 4 100.00 10.00 3 T j =150 o C -IS(A) 1.00 T j =25 o C -VGS(th) (V) 2 0.10 1 0 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9435GK 14 10000 f=1.0MHz 12 -VGS , Gate to Source Voltage (V) I D = -5.3A V DS = -24V 10 1000 8 6 C (pF) Ciss Coss Crss 100 4 2 0 0 2 4 6 8 10 12 14 16 18 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) DUTY=0.5 10 1ms 0.2 0.1 0.1 -ID (A) 10ms 1 0.05 0.02 100ms 1s 0.01 PDM 0.01 t T Single Pulse 0.1 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 120/W 0.01 0.1 T A =25 o C Single Pulse 1 10 DC 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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